Growth and structural properties of thick InAs films on GaAs with low-pressure metalorganic vapor phase epitaxy

Band parameters for III–V compound semiconductors and their alloys

I. Vurgaftman, J. R. Meyer, L. R. Ram‐Mohan · Journal of Applied Physics · 2001 · 7.1K citations

Semiconductors, Materials Science, Electrical Engineering +13

GaSb booster cells for over 30% efficient solar-cell stacks

Lewis M. Fraas, Gerald R. Girard, J. E. Avery et al. · Journal of Applied Physics · 1989 · 139 citations

Engineering, Energy Efficiency, Energy Conversion +20

Scaling laws for the reduction of threading dislocation densities in homogeneous buffer layers

James S. Speck, M. A. Brewer, Glenn E. Beltz et al. · Journal of Applied Physics · 1996 · 138 citations

Engineering, Td Densities, Mechanics +19

Resonant enhancement of impact in Ga1−<i>x</i>Al<i>x</i>Sb

O. Hildebrand, W. Kuebart, M. H. Pilkuhn · Applied Physics Letters · 1980 · 65 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Nitride semiconductors—impact on the future world

Isamu Akasaki · Journal of Crystal Growth · 2002 · 62 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +4