Fabrication and characterization of “on-edge” molecular junctions for molecular electronics

Abstract

A high throughput fabrication method of molecular junctions with a typical area of 0.005–0.01μm2 is presented. The small size is determined by one optical lithography step. The structure of junctions is metal-SAM-metal, where SAM is a self-assembled molecular layer with <105 molecules. The effect of attributes such as temperature, type of metal films, and molecular structure of the SAM on the I-V characteristics of the junctions is found to be in agreement with previous results and theoretical predictions. The prospect advantages of the junctions for future research are also mentioned.