Lifetimes and Capture Cross Sections in Gold-Doped Silicon

Abstract

The free lifetimes of electrons and holes in gold-doped silicon were determined by applying an electric field and measuring the amplitude of the pulses produced by $\ensuremath{\alpha}$-particles. Knowing the impurity concentrations and assuming that the lifetimes is determined primarily by capture at the gold-sites, the cross sections for capture were calculated. The value for either electrons or holes at neutral gold sites is 2\ifmmode\times\else\texttimes\fi{}${10}^{\ensuremath{-}15}$ ${\mathrm{cm}}^{2}$ and at oppositely-charged sites, 1\ifmmode\times\else\texttimes\fi{}${10}^{\ensuremath{-}13}$ ${\mathrm{cm}}^{2}$.