Recombination Properties of Gold in Silicon

Abstract

The presence of gold atoms in the silicon lattice decreases the lifetime of excess electrons and holes in $p$- and $n$-type material. The capture of electrons in $p$-type silicon occurs through the gold donor level with a capture cross section, ${\ensuremath{\sigma}}_{n0}$, of 3.5\ifmmode\times\else\texttimes\fi{}${10}^{\ensuremath{-}15}$ ${\mathrm{cm}}^{2}$ (at 300\ifmmode^\circ\else\textdegree\fi{}K). This capture cross section varies as ${T}^{\ensuremath{-}2.5}$ between 200\ifmmode^\circ\else\textdegree\fi{} and 500\ifmmode^\circ\else\textdegree\fi{}K. In $n$-type silicon the electron capture cross section, ${\ensuremath{\sigma}}_{n0}$, is 5\ifmmode\times\else\texttimes\fi{}${10}^{\ensuremath{-}16}$ ${\mathrm{cm}}^{2}$ at 300\ifmmode^\circ\else\textdegree\fi{}K and is temperature independent; the hole capture cross section, ${\ensuremath{\sigma}}_{p0}$, is 1\ifmmode\times\else\texttimes\fi{}${10}^{\ensuremath{-}15}$ ${\mathrm{cm}}^{2}$ at 300\ifmmode^\circ\else\textdegree\fi{}K and varies as ${T}^{\ensuremath{-}4}$. The capture in this case occurs through the gold acceptor level.