Phonon-Limited Electron Mobility in Si(100) Inversion Layer at Low Temperatures

Abstract

Calculation of electron mobility due to surfon scattering at temperatures 1 ≤ T ≤50 K and electron surface densities 10 12 ≤ N s ≤5 ×10 12 cm -2 indicates, when compared with measurements by Kawaguchi and Kawaji, that the surfon scattering alone cannot explain the temperature dependent part which they extracted.