Applied Physics Letters · 1999 · 11 citations · 13 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials CharacterizationSemiconductor MaterialsThin FilmsDefect CharacterizationDefects In Electronic MaterialsSemiconductor DefectsSemiconductor InterfacesSemiconductor PhysicsSemiconductor Thin FilmsAmorphous CarbonCapacitanceCapacitance Measurement TechniquesDefect DensityDefect StatesJunction CapacitanceSemiconductor CharacterizationTetrahedrally Bonded Amorphous Semiconductors
Junction capacitance measurements performed on tetrahedrally bonded amorphous carbon (ta-C)/crystalline-Si (c-Si) heterostructures are used to deduce the defect density in thin ta-C films. Using the drive level capacitance profiling technique, we determine a homogeneous defect density of 6±1.5×1017 cm−3 in the undoped (p-type) ta-C films and one order of magnitude larger in the nitrogen-doped (n-type) films. Admittance measurements reveal defect states at the ta-C/c-Si interface with a density exceeding 2×1012 cm−2.
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