Investigation of charging phenomena in silicon nanocrystal metal–oxide–semiconductor capacitors using ramp current–voltage measurements

Abstract

Current–voltage (I–V) measurements with different ramp rates were used to investigate charge trapping phenomena in silicon nanocrystal metal–oxide–semiconductor capacitors, fabricated by low-pressure chemical vapor deposition of very thin silicon layers on a tunneling silicon oxide and subsequent high-temperature thermal oxidation. The nanocrystal size was in the range of 1–2 nm. Capacitance–voltage curves deduced from the ramp I–V measurements showed an N-shaped peak after a threshold voltage, from which the charge trapped in the structure was calculated.