V. Ioannou-Sougleridis

Author

National Centre of Scientific Research "Demokritos"ORCID

Also Known As

B Ioannou-Sougleridis, B. Ioannou-Sougleridis, Ioannou-Sougleridis, Vassilios, J. Ingleby, V Ioannou-Sougleridis, V. IOANNOU-SOUGLERIDIS, V. Ioannou-Sougleridis, Vassilios Ioannou-Sougleridis, Vassilios Ioannou‐Sougleridis, Vassilis Ioannou-Sougleridis

102

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

National Centre of Scientific Research "Demokritos"Centre National de la Recherche Scientifique University of Patras Centre d’Élaboration de Matériaux et d’Études Structurales University of Tartu

About

V. Ioannou-Sougleridis is an author at National Centre of Scientific Research "Demokritos" specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	30	810
2	Applied Physics	16	28	767
3	Chemistry	5	5	78
4	Chemical Engineering	2	2	23
5	Computer Engineering	1	1	15

V. Ioannou-Sougleridis

Publications

Citations

H-Index

Page 1

	Year	Citations
Graphene‐Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaO<i><sub>x</sub></i> Based Memristive Devices Michael Lübben, Panagiotis Karakolis, V. Ioannou-Sougleridis, Advanced Materials	2015	151
Charging effects in silicon nanocrystals within SiO2 layers, fabricated by chemical vapor deposition, oxidation, and annealing D.N. Kouvatsos, V. Ioannou-Sougleridis, A. G. Nassiopoulou Applied Physics Letters EngineeringSemiconductor MaterialsSilicon On InsulatorSemiconductor DeviceSemiconductors	2003	107
Structural and electrical quality of the high-<i>k</i> dielectric Y2O3 on Si (001): Dependence on growth parameters A. Dimoulas, G. Vellianitis, A. Travlos, Journal of Applied Physics EngineeringUltrahigh VacuumThin Film Process TechnologyMolecular Beam EpitaxyEpitaxial Growth	2002	83
Si and Ge nanocrystals for future memory devices C. Bonafos, M. Carrada, G. Benassayag, Materials Science in Semiconductor Processing EngineeringNanoelectronicsNanotechnologyApplied PhysicsMemory Device	2012	45
Effects on surface morphology of epitaxial Y2O3 layers on Si (001) after postgrowth annealing V. Ioannou-Sougleridis, Vassilios Constantoudis, Marin Alexe, Thin Solid Films Materials EngineeringMaterials ScienceEngineeringOxide ElectronicsSurface Science	2004	44
Understanding the role of defects in Silicon Nitride-based resistive switching memories through oxygen doping Nikolaos Vasileiadis, Panagiotis Karakolis, Panagiotis Mandylas, IEEE Transactions on Nanotechnology Materials ScienceElectrical EngineeringEngineeringPhysicsResistive Memories	2021	39
Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy J. Kruse, L. Lymperakis, S. Eftychis, Journal of Applied Physics EngineeringWindow DiameterMask WindowsOptoelectronic DevicesSemiconductor Nanostructures	2016	38
Electrical properties of Y2O3 high-κ gate dielectric on Si(001): The influence of postmetallization annealing V. Ioannou-Sougleridis, G. Vellianitis, A. Dimoulas Journal of Applied Physics EngineeringSilicon On InsulatorElectrical PropertiesSemiconductor DeviceInsulator Traps	2003	37
Investigation of charging phenomena in silicon nanocrystal metal–oxide–semiconductor capacitors using ramp current–voltage measurements V. Ioannou-Sougleridis, A. G. Nassiopoulou Journal of Applied Physics Materials ScienceRamp Current–voltage MeasurementsElectrical EngineeringEngineeringNanotechnology	2003	35
Growth of two-dimensional arrays of silicon nanocrystals in thin SiO<sub>2</sub>layers by low pressure chemical vapour deposition and high temperature annealing/oxidation. Investigation of their charging properties A Salonidou, A. G. Nassiopoulou, A. Travlos, Nanotechnology High Temperature Annealing/oxidationEngineeringTwo-dimensional ArraysSilicon OxideSilicon On Insulator	2004	33

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