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Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy

PhotonicsElectrical EngineeringPhotoluminescenceEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceIngan/gan Quantum-well StructuresCategoryiii-v SemiconductorPhotoluminescence CharacteristicsOptoelectronicsCompound SemiconductorPit Formation