Applied Physics Letters · 1992 · 171 citations · 17 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsEpitaxial GrowthOxide SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor Thin FilmsEpitaxial Film GrowthEpitaxial MaterialsEpitaxial Thin FilmsEpitaxial Thin-film GrowthLattice MismatchLattice Mismatch EffectsPulsed Laser Deposition
MgO buffer layers were deposited on GaAs by pulsed laser deposition for epitaxial growth of BaTiO3. MgO was grown epitaxially on GaAs for the first time; the orientation is (001) on GaAs(001). The best crystallographic quality was obtained at 350 °C in 5×10−6 Torr O2. BaTiO3 films with (001) orientation grew epitaxially on MgO/GaAs. The in-plane epitaxial relationship was BaTiO3[100]∥ MgO[100]∥ GaAs[100] in spite of a large lattice mismatch (25.5%) between MgO and GaAs.
17
Epitaxial growth of CeO2 layers on silicon
Tomoyasu Inoue, Y. Yamamoto, S. Koyama et al. · Applied Physics Letters · 1990 · 266 citations