Optical and electrical properties of amorphous silicon films prepared by photochemical vapor deposition

Abstract

Amorphous silicon films have been prepared through mercury-photosensitized decomposition of monosilane gas at low temperatures. The films show optical and electrical properties comparable with those of the best films prepared by plasma chemical vapor deposition. The feasibility of amorphous solar cells with short-circuit current densities of more than 10 mA/cm2 has been demonstrated by fabrication of a Schottky barrier structure.