Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs

Abstract

A two-way tunneling model describing simultaneous oxide trap charging and discharging in SiC MOSFETs is presented, along with a comparison with experimental results. This model can successfully account for the variation in threshold-voltage instability observed as a function of bias-stress time, bias-stress magnitude, and measurement time.