Applied Physics Express · 2010 · 48 citations · 17 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsAtomic-scale ElectronicsCmos ScalingElectric Field EffectsEnduranceNanoelectronic DevicesNonvolatile MemoryPower ConsumptionSwitching Devices
We demonstrate a conceptually new atom transistor operation by electric-field control of the nanoionic state. The new atom transistor possesses novel characteristics, such as dual functionality of selective volatile and nonvolatile operations, very small power consumption (pW), and a high ON/OFF ratio [106 (volatile operation) to 108 (nonvolatile operation)], in addition to complementary metal oxide semiconductor (CMOS) process compatibility enabling the development of future computing systems that fully utilize highly-integrated CMOS technology. Cyclic endurance of 104 times switching was achieved with the prototype.
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Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart et al. · Nature · 2008 · 11.5K citations
Engineering, Electrical Engineering, Electronic Materials +5
A Defect-Tolerant Computer Architecture: Opportunities for Nanotechnology
James R. Heath, Philip J. Kuekes, Gregory S. Snider et al. · Science · 1998 · 894 citations