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Excitonic photoluminescence in a CuAlSe2 chalcopyrite semiconductor grown by low-pressure metalorganic chemical-vapor deposition

Shigefusa F. Chichibu, Satoru Matsumoto, Sho Shirakata, Shigehiro Isomura, Hirofumi Higuchi

Journal of Applied Physics · 1993 · 31 citations · 13 references

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Abstract

Excitonic photoluminescence (PL) in a CuAlSe2 chalcopyrite semiconductor was observed. High-quality CuAlSe2 epilayers were grown by the low-pressure metalorganic chemical-vapor deposition technique. Based on photoreflectance measurements, the PL peak at 2.739 eV was assigned to a free exciton emission. The PL peak at 2.677 eV was tentatively assigned to a bound exciton emission.

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