Electronics Letters · 1993 · 17 citations · 0 references
EngineeringElectrical EngineeringMicrowave EngineeringSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave OscillatorsMicrowave ResonatorsMicrowave Semiconductor DevicesSemiconductor PhysicsGaas Microwave Integrated CircuitsGaas OscillatorsNegative Effective Mass DensitySemiconductor Materials For Microwave DevicesSuperlattice MaterialsSuperlattices
The negative differential conductance originating from miniband negative effective mass has been characterised at high frequencies in two GaAs/AlAs superlattice devices. High reflection gains reaching 10 dB at 38 GHz have been observed up to 60 GHz. These results demonstrate the excellent potentialities of superlattices for millimetre-wave oscillator applications.