Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls

Abstract

Characterization of MOSFETs formed on trench sidewalls is important to achieve high-performance UMOSFETs. In this paper, 4H-SiC MOSFETs formed on the different trench sidewalls were fabricated to evaluate basic MOSFET performance. MOS channel is one side of the trench to evaluate the effect of channel plane on MOSFET performance. MOS channel plane were (1120), (1120), (1100), and (1100). The highest channel mobility was 43cm 2 /Vs for (1120) and the lowest channel mobility was 21cm 2 /Vs for (1120), which is the opposite face to (1120). The channel mobilities on (1100) and (1100) are similar value between (1120) and (T120). The different characteristics of MOSFETs on (1120) and (1120) were thought to be due to the combination of the substrate off-angle and the trench taper angle.