Temporally resolved growth habit studies of InP/(InGa)As heterostructures grown by MOCVD on contoured InP substrates

Characteristics of the {111} Surfaces of the III–V Intermetallic Compounds

H. C. Gatos, M. C. Lavine · Journal of The Electrochemical Society · 1960 · 242 citations

Natural Sciences, Materials Engineering, Materials Science +15

A study of the orientation dependence of Ga(Al)As growth by MOVPE

S. D. Hersee, E. Barbier, R. Blondeau et al. · Journal of Crystal Growth · 1986 · 128 citations

Natural Sciences, Materials Engineering, Materials Science +9

High quality molecular beam epitaxial growth on patterned GaAs substrates

J. S. Smith, P. L. Derry, S. Margalit et al. · Applied Physics Letters · 1985 · 73 citations

Engineering, Electrical Engineering, Materials Science +16

Growth behavior during nonplanar metalorganic vapor phase epitaxy

Piet Demeester, Peter Van Daele, Roel Baets · Journal of Applied Physics · 1988 · 64 citations

Engineering, Electrical Engineering, Materials Science +17

MOCVD of InP and mass transport on structured InP substrates

C. Blaauw, A. M. Szaplonczay, K. Fox et al. · Journal of Crystal Growth · 1986 · 50 citations

Engineering, Materials Engineering, Materials Science +13