A new silicon-on-insulator structure using a silicon molecular beam epitaxial growth on porous silicon

Abstract

A new silicon-on-insulator (SOI) structure has been achieved by utilizing silicon molecular beam epitaxial (Si-MBE) growth on porous silicon, silicon island patterning, and the subsequent laterally enhanced oxidation of the porous silicon. The surface of Si-MBE film grown on porous silicon at 770 °C without high-temperature preheating has a 7×7 superlattice structure when observed by a reflection high-energy electron diffraction (RHEED). Patterned Si-MBE film island, that is 7.0 μm wide and 0.35 μm thick, is successfully isolated by the laterally enhanced oxidation of porous silicon.