Preparation of n-type nanocrystalline 3C-SiC films by hot-wire CVD using N2 as doping gas

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Hiroyuki Matsunami, Tsunenobu Kimoto · Materials Science and Engineering R Reports · 1997 · 609 citations

Engineering, Materials Engineering, Materials Science +14

THE DISSOCIATION OF HYDROGEN INTO ATOMS.¹

Irving Langmuir · Journal of the American Chemical Society · 1912 · 139 citations

Natural Sciences, Chemistry, Chemical Kinetics +5

THE DISSOCIATION OF HYDROGEN INTO ATOMS. Part I. Experimental.

Irving Langmuir, G M Mackay · Journal of the American Chemical Society · 1914 · 108 citations

Natural Sciences, Chemistry, Physics +7

Relaxation and crystallization of amorphous silicon carbide probed by optical measurements

Paolo Musumeci, R. Reitano, L. Calcagno et al. · Philosophical Magazine B · 1997 · 71 citations

Natural Sciences, Materials Engineering, Materials Science +17

Compensation in epitaxial cubic SiC films

B. Segall, Samuel A. Alterovitz, E. J. Haugland et al. · Applied Physics Letters · 1986 · 68 citations

Engineering, Materials Engineering, Materials Science +16