Applied Physics Letters · 2004 · 20 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsSemiconductor MaterialsElectronic Band StructureEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor HeterostructuresSemiconductor NanomaterialsWide Band Gap SemiconductorsBand GapBarrier Layer FormationElectronic Band GapEpitaxial Film GrowthEpitaxial MaterialsMolecular Beam EpitaxyOptical Band GapUltraviolet Emission Spectra
High crystalline quality zinc-blende structure Zn(1−x)MgxSe epitaxial layers were grown on InP (001) substrates by molecular beam epitaxy. Their band gap energies were determined as a function of Mg concentration and a linear dependence was observed. The band gap of the Zn(1−x)MgxSe closely lattice matched to InP was found to be 3.59 eV at 77 K and the extrapolated value for zinc-blende MgSe was determined to be 3.74 eV. Quantum wells of Zn(1−x)CdxSe with Zn(1−x)MgxSe as the barrier layer were grown which exhibit near ultraviolet emission.
8
Energy-gap variations in semiconductor alloys
R. Hill · Journal of Physics C Solid State Physics · 1974 · 246 citations