U. Lunz

Molecular-beam epitaxy of beryllium-chalcogenide-based thin films and quantum-well structures

A. Waag, F. Fischer, H.‐J. Lugauer et al. · Journal of Applied Physics · 1996 · 212 citations

Engineering, Bete Buffer Layers, Optoelectronic Devices +17

<i>E</i> band-gap energy and lattice constant of ternary Zn1−<i>x</i>Mg<i>x</i>Se as functions of composition

B. Jobst, D. Hommel, U. Lunz et al. · Applied Physics Letters · 1996 · 195 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +13

Novel beryllium containing II–VI compounds: basic properties and potential applications

A. Waag, Th. Litz, F. Fischer et al. · Journal of Crystal Growth · 1998 · 87 citations

Materials Science, Inorganic Chemistry, Engineering +6

Temperature dependence of the energy gap of zinc-blende CdSe and Cd1−<i>x</i>Zn<i>x</i>Se epitaxial layers

U. Lunz, Johannes Kühn, F. Goschenhofer et al. · Journal of Applied Physics · 1996 · 67 citations

Optical Materials, Engineering, Temperature Dependence +21

Beryllium chalcogenides for ZnSe-based light emitting devices

A. Waag, F. Fischer, H.‐J. Lugauer et al. · Materials Science and Engineering B · 1997 · 33 citations

Electrical Engineering, Solid-state Lighting, Engineering +5