Barrier height change in GaAs Schottky diodes induced by piezoelectric effect

Abstract

A novel manifestation of piezoelectric effects in GaAs has been observed. The change of barrier height, φB, of Schottky diodes induced by uniaxial stresses, S, along 〈100〉, 〈011〉, 〈01̄1〉, and 〈111〉 has been measured. Shifts in φB due to the appearance of piezoelectric polarization charges at the semiconductor-metal interface for directions other than 〈100〉 are observed.