Photoluminescence spectra of doped GaAs films

Photoluminescence of Al<i>x</i>Ga1−<i>x</i>As alloys

Lorenzo Pavesi, M. Guzzi · Journal of Applied Physics · 1994 · 495 citations

Natural Sciences, Materials Science, Physics +17

Determination of the charge carrier concentration and mobility in n‐gap by Raman spectroscopy

G. Irmer, V. V. Toporov, B. H. Bairamov et al. · physica status solidi (b) · 1983 · 163 citations

Natural Sciences, Materials Science, Physics +17

Reabsorption, band-gap narrowing, and the reconciliation of photoluminescence spectra with electrical measurements for epitaxial <i>n</i>-InP

R. M. Sieg, S. A. Ringel · Journal of Applied Physics · 1996 · 42 citations

Engineering, Materials Engineering, Materials Science +17

Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy

Z.-F. Li, Wencong Lu, H.-J. Ye et al. · Journal of Applied Physics · 1999 · 35 citations

Engineering, Materials Engineering, Materials Science +17

Photonic dispersions of semiconductor-quantum-dot-array-based photonic crystals in primitive and face-centered cubic lattices

Yifeng Fu, M. Willander, E. L. Ivchenko · Superlattices and Microstructures · 2000 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +16