Publication | Closed Access
Anomalous behavior of excess energy curves of InxGa1−xN grown on GaN and InN
35
Citations
12
References
2000
Year
Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringExcess Energy CurvesAnomalous BehaviorApplied PhysicsAluminum Gallium NitrideGan Power DeviceInxga1−xn Grown
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