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Platinum, Ruthenium and Ruthenium Dioxide Electrodes Deposited by Metal Organic Chemical Vapor Deposition for Oxide Applications
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2002
Year
Materials ScienceRuthenium DioxideEngineeringFerroelectric ApplicationOxide ElectronicsSurface ElectrochemistrySurface ScienceApplied PhysicsOxide ApplicationsChemistryThin FilmsRuo 2Electrochemical ProcessW Z CmElectrochemical InterfaceElectrode Reaction MechanismElectrochemistry
Platinum (Pt), ruthenium (Ru), and ruthenium dioxide (RuO 2 ) have been considered as possible candidates as electrodes for high permittivity and ferroelectric oxides. The films were grown by metal organic chemical vapor deposition (MOCVD). High purity Pt films with near bulk resistivities (11 w z cm) were deposited. The Pt, Ru and RuO 2 films were found to be continuous and smooth and exhibited excellent adhesion properties on the underlying substrates. The temperature dependent electrical conductivity of the Ru and RuO 2 films was metallic type. Room temperature resistivities as low as 18 and 30 w z cm were determined for Ru and RuO 2 , respectively.