Journal of Applied Physics · 1994 · 15 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsAmorphous Electronic MaterialsSemiconductor Crystal GrowthSemiconductor Thin FilmsThin Film AnnealingThin Film NucleationThin-film MaterialsAnnealing EffectsAnnealing Temperature EffectsAnnealing Time EffectsCrystallization In Thin FilmsFilm Growth MechanismsFractal DimensionPolycrystalline MaterialsThin-film Morphology
Solid-state reaction and crystallization in Pd/a-Ge bilayer films of various ratios of thickness (or composition) after annealing have been investigated by transmission electron microscopy. Besides polycrystalline Pd and amorphous Ge, the Pd2Ge phase is formed in as-evaporated films with 54 and 67 at % of Ge. During annealing at 250 °C Pd2Ge and PdGe are formed. During annealing at 350 °C, besides the formation of Pd2Ge and PdGe, crystallization of amorphous Ge takes place, inducing fractal-like structures with a size of about 1 μm. The fractal dimension varies from 1.60 to 1.88, depending on the composition of the films. The fractal formation can be explained by a random successive nucleation model.
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Crystallization of Ge and Si in metal films. I
G. Ottaviani, D. Sigurd, V. Marrello et al. · Journal of Applied Physics · 1974 · 122 citations
Natural Sciences, Materials Engineering, Materials Science +17