Suppression of Measurement Interferences from Interface States and Mobile Ions in Thermally Stimulated Current Measurements in an MOS Capacitor

Abstract

A study was made of the effectiveness of different procedures for suppressing measurement interferences from interface states at the oxide‐silicon interface and from mobile ions in the oxide layer of MOS capacitors during thermally stimulated current measurements. It was found that the interface states can be activated or deactivated by the choice of biasing sequences and that the interference of mobile ions can be suppressed by bias temperature stress procedures which move the mobile ions to the metal electrode.