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Ultrathin Film Encapsulation of an OLED by ALD
151
Citations
6
References
2005
Year
Aluminium NitrideOptical MaterialsEngineeringOrganic ElectronicsDouble LayerInitial LuminanceOptoelectronic DevicesThin Film Process TechnologyChemical DepositionSurface TechnologyElectronic DevicesOrganic LightMaterials ScienceElectrical EngineeringOptoelectronic MaterialsWhite OledElectronic MaterialsSurface ScienceApplied PhysicsUltrathin Film EncapsulationThin FilmsOptoelectronicsChemical Vapor Deposition
Fabrication of barrier layers on a PES film and an organic light emitting diode (OLED) based on a glass substrate by atomic layer deposition (ALD) have been carried out. Deposition of 30 nm of film on both sides of PES film at 90°C gave film MOCON value of The passivation performance of the double layer consisting of deposited by plasma-enhanced chemical vapor deposition and by ALD on the OLED has been investigated using the OLED based on a glass substrate. Preliminary life time of two pairs of double layer coated OLED to 65% of initial luminance was 600 h at the initial luminance of © 2005 The Electrochemical Society. All rights reserved.
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