Publication | Closed Access
The influence of coalescence time on unintentional doping in GaN/sapphire
42
Citations
20
References
2008
Year
Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsApplied PhysicsGan Power DeviceGallium OxideCoalescence TimeCategoryiii-v Semiconductor
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