Publication | Closed Access
Anisotropic valence bands in quantum wells: Quantitative comparison of theory and experiment
39
Citations
12
References
1992
Year
Materials ScienceElectrical EngineeringEngineeringPhysicsTopological HeterostructuresCompound SemiconductorMev AccuracyApplied PhysicsCondensed Matter PhysicsQuantum MaterialsQuantum WellsValence Subband DispersionGaas/algaas QuantumCategoryiii-v SemiconductorOptoelectronicsQuantitative ComparisonAnisotropic Valence BandsAnisotropic Material
The valence subband dispersion of GaAs/AlGaAs quantum wells is measured with meV accuracy using the recombination of hot electrons at neutral acceptors. This precision, in combination with polarization-dependent matrix elements, allows direct observation and measurement of the warping. The measurements, for in-plane wave vectors which extend over a substantial fraction of the Brillouin zone, are shown to be in very good agreement with k\ensuremath{\cdot}p calculations.
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