U. Ekenberg - Concepedia

Author

U. Ekenberg

KTH Royal Institute of Technology

Also Known As

Ekenberg, U., U Ekenberg, U. EKENBERG, U. Ekenberg, Ulf A. Ekenberg, Ulf Ekenberg

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

KTH Royal Institute of Technology University of Nottingham Max Planck Society Max Planck Institute for Solid State Research University of Cambridge

About

U. Ekenberg is an author at KTH Royal Institute of Technology specializing in physics, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	23	918
2	Applied Physics	15	23	918
3	Natural Sciences	9	9	251
4	Electrical Engineering	8	8	640
5	Chemistry	2	2	32

U. Ekenberg

Publications

945

Citations

H-Index

Page 1

	Year	Citations
Calculations of hole subbands in semiconductor quantum wells and superlattices M. Altarelli, U. Ekenberg, A. Fasolino Physical review. B, Condensed matter SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	1985	249
Exciton binding energy in a quantum well with inclusion of valence-band coupling and nonparabolicity U. Ekenberg, M. Altarelli Physical review. B, Condensed matter EngineeringExcitation Energy TransferValence-band CouplingElectronic StructureExciton Wave Function	1987	124
Enhancement of nonparabolicity effects in a quantum well U. Ekenberg Physical review. B, Condensed matter Quantum DynamicQuantum ScienceElectrical EngineeringEngineeringQuantum Computing	1987	93
Empirical relation between gate voltage and electrostatic potential in the one-dimensional electron gas of a split-gate device D. Wharam, U. Ekenberg, M. Pepper, Physical review. B, Condensed matter Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringChannel ThicknessGate Voltage	1989	81
Valence subband structure and optical gain of GaAs-AlGaAs (111) quantum wells W. Batty, U. Ekenberg, A Ghit, Semiconductor Science and Technology Wide-bandgap SemiconductorPhotonicsEngineeringPhysicsApplied Physics	1989	45
Anisotropic valence bands in quantum wells: Quantitative comparison of theory and experiment J. A. Kash, M. Zachau, M. A. Tischler, Physical Review Letters Materials ScienceElectrical EngineeringEngineeringPhysicsTopological Heterostructures	1992	39
Superefficient electric-field–induced spin-orbit splitting in strained <i>p</i> -type quantum wells Dejan M. Gvozdić, U. Ekenberg Europhysics Letters (EPL)	2006	27
Probing the anisotropic dispersion of hole states in (100) and (311)A AlAs/GaAs/AlAs quantum wells R. K. Hayden, L. Eaves, M. Henini, Semiconductor Science and Technology Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringHole StatesOptical Properties	1994	27
Effective mass and band nonparabolicity in remote doped Si/Si0.8Ge0.2 quantum wells T. E. Whall, Andrew Plews, N. L. Mattey, Applied Physics Letters SemiconductorsEffective MassesSemiconductor TechnologyEngineeringPhysics	1995	24
Low Threshold Current InP-Based Strained-Layer 1.55µm Lasers A. Ghiti, W. Batty, U. Ekenberg, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Wide-bandgap SemiconductorPhotonicsOptical MaterialsEngineeringLaser Science	1988	21

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