Density of state effective mass and related charge transport properties in K-doped BiCuOSe

Abstract

We report the enhanced p-type conduction properties in BiCuOSe by doping of monovalent ions (K+). As compared with undoped BiCuOSe, simultaneous increase in both the carrier concentration and the Hall mobility was achieved in the K-doped BiCuOSe. The origin of the enhancement was discussed in terms of the two-band structure in the valence band of the BiCuOSe, and the density of state effective masses of the heavy (∼1.1 me) and light hole (∼0.18 me) were estimated by using Pisarenko relation.