Single Event Upset Measurements of Gaas E-JFET RAMS

Abstract

This paper reports the first single event upset measurements on a GaAs RAM. These measurements on fully operational 256-bit GaAs static RAMs were performed with 40-MeV protons at the NRL Cyclotron. The average upset cross section was 8 × 10-12 cm2/proton-bit. The single event upset cross section for these GaAs memories is comparable to the single event upset cross section measured in 40-MeV proton beams for representative Si memories. An estimate of the expected single event upset rate due to protons in 600 orbits for these GaAs memories is compared to representative Si memories.