IEEE Electron Device Letters · 1984 · 57 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIntegrated Circuit FabricationMicrowave Integrated CircuitsMicrowave Semiconductor DevicesSemiconductor Thin FilmsSubstrate PreparationElectron Beam EvaporationEpitaxial Wafer PreparationGaas Monolithic Microwave Integrated CircuitsMonolithic Microwave Integrated CircuitsSiliconSilicon WafersTransconductanceTransistor Output Characteristics
GaAs MESFET's have been fabricated for the first time on monolithic GaAs/Si substrates. The substrates were prepared by growing single-crystal GaAs layers on Si wafers that had been coated with a Ge layer deposited by e-beam evaporation. The MESFET's exhibit good transistor characteristics, with maximum transconductance of 105 mS/mm for a gate length of 2.1 µm.