Applied Physics Letters · 2006 · 79 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsAmorphous MaterialsAmorphous SemiconductorsAmorphous SolidsCrystallization ProcessesNucleationSilicon MaterialsAmorphous Semiconductor FilmsAmorphous SiliconAmorphous StructureAnnealingAnnealing EffectsAnnealing Temperature EffectsAnnealing Time EffectsSpontaneous Nucleation
Metal-induced lateral crystallization (MILC) of amorphous SiGe films on SiO2 has been investigated as a function of Ge fraction (0%–100%) and annealing temperature (320–550°C). High temperature annealing (>500°C) caused spontaneous nucleation in amorphous SiGe with a high Ge fraction (>70%). This suppressed the progress of MILC. Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (<400°C). As a result, large poly-SiGe regions (>20μm) were observed around Ni patterns even for high Ge fractions (>70%). In this way, MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0%–100%).
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