Proceedings of the IEEE · 1971 · 16 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical FibersOptical Properties Of SemiconductorsOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresElectroluminescent MaterialsHeterostructure DesignHeterostructure DevicesHeterostructure OptoelectronicsLiquid Phase Epitaxy
A GaAs-Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> As heterostructure prepared by liquid-phase epitaxy has been employed in the fabrication of efficient small-area (50-µm diameter) electroluminescent diodes, and the light output has been coupled into optical fibers. The light output through a short fiber was about 1 mW at a wavelength of 0.9 µm for a bias current of 200 mA dc. By comparison, the output from the most efficient diffused GaAs diodes of similar geometry was about 0.4 mW at this current.
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