Characterization of Fe-doped semi-insulating InP by low temperature and room temperature spatially resolved photoluminescence

Optical Processes in Semiconductors

J. I. Pánkové, D. A. Kiewit · Journal of The Electrochemical Society · 1972 · 4.6K citations

Engineering, Materials Engineering, Materials Science +14

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

D. E. Aspnes, A. A. Studna · Physical review. B, Condensed matter · 1983 · 4K citations

Natural Sciences, Materials Engineering, Materials Science +17

The photoluminescence spectra of excitons bound to group II acceptors in indium phosphide

A. M. White, P. Dean, K.M. Fairhurst et al. · Solid State Communications · 1972 · 83 citations

Natural Sciences, Materials Science, Physics +15

Photoluminescence identification of the C and Be acceptor levels in InP

B. J. Skromme, G. E. Stillman, J. D. Oberstar et al. · Journal of Electronic Materials · 1984 · 75 citations

Natural Sciences, Chemistry, Electronic Materials +12

Liquid Phase Epitaxy of InP

K. Hess, N. Stath, K.W. Benz · Journal of The Electrochemical Society · 1974 · 70 citations · Full text

Engineering, Materials Engineering, Materials Science +15