Publication | Closed Access
Selective etching of dislocations in GaN grown by low-pressure solution growth
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Citations
13
References
2010
Year
Materials EngineeringMaterials ScienceWide-bandgap SemiconductorSelective EtchingEngineeringSurface ScienceApplied PhysicsAluminum Gallium NitrideGan Power DeviceLow-pressure Solution GrowthCategoryiii-v SemiconductorPlasma Etching
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