Electronics Letters · 1990 · 19 citations · 0 references
EngineeringAtmospheric PhotochemistryAtmospheric PressureThin Film Process TechnologySilicon On InsulatorChemical EngineeringEpitaxial GrowthPreliminary GrowthSimple Growth TechnologyOzone Layer DepletionMaterials ScienceElectrical EngineeringOxide ElectronicsSemiconductor Device FabricationOzoneHigh Temperature MaterialsSurface ScienceApplied PhysicsThin FilmsUltra-thin Oxides
We report here a new and simple growth technology which is capable of producing ultra-thin oxides (≈ 40 Å) on silicon at temperatures below 500°C. Preliminary growth and electrical measurements are discussed.