Electronics Letters · 1992 · 11 citations · 0 references
EngineeringElectrical EngineeringElectronic MaterialsOptoelectronicsPhotonicsHigh-frequency Semiconductor DevicesLaser DiodesLaser PhysicsOptical SourcesPhotonic Integrated CircuitsSemiconductor LasersCurrentsLow-threshold Current LasersQuantum Well LasersSemiconductor Laser Diodes
The successful realisation of high speed MBE grown InGaAs/InGaAlAs MQW active layer DFB BRS lasers is reported, with threshold currents as low as 9.5 mA, and bandwidths up to 9 GHz. The devices operate at l0 Gbit/s, with a chirp value lower than 0.1 nm; a very small α parameter value of 1.8 was measured above threshold.