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Ion Beam Assisted Deposition of Metal Organic Films Using Focused Ion Beams
124
Citations
6
References
1984
Year
Optical MaterialsEngineeringOrganic ElectronicsIon Beam InstrumentationFilm DepthChemical DepositionChemical EngineeringIon ImplantationBeam LithographyIon Beam PhysicsIon BeamIon EmissionMaterials ScienceOrganic SemiconductorOrganic MaterialsSurface ScienceApplied PhysicsIon BeamsTrimethyl AluminumThin Films
Investigate characteristics of ion beam assisted deposition using 50 keV Ar⁺ or focused Au⁺ irradiation in a trimethyl aluminum atmosphere. Films about 80 nm thick were deposited at a dose of 1 × 10¹⁶ cm⁻², with composition and depth profile measured by Auger electron spectroscopy, and maskless pattern deposition was performed using 50 keV focused ion beams. The deposited films contain oxygen, carbon, and aluminum with an atomic ratio of 0.8:1.1:1.4 at the surface and 0.8:3.3:1 at the interior, indicating depth‑dependent composition.
50 keV Ar + or focused Au + were irradiated in a trimethyl aluminum atmosphere to investigate characteristics of ion beam assisted deposition. About 80 nm thick films were deposited at a dose of 1×10 16 /cm 2 . The film composition and its depth dependence was measured by Auger electron spectroscopy. It was found that the film contains oxygen, carbon and aluminum, and the atomic ratio varies across the film depth. The atomic ratio was 0.8(O):1.1 (C):1.4(Al) at the surface and was 0.8(O):3.3(C):1(Al) inside. A direct maskless pattern deposition was also done using 50 keV focused ion beams.
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