Japanese Journal of Applied Physics · 1984 · 124 citations · 6 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSurface ScienceThin FilmsThin-film DepositionThin-film MaterialsCompositionDepth DependenceFocused Ion Beam PatterningMetal Thin FilmsOrganic Thin FilmsSputter Deposition
Investigate characteristics of ion beam assisted deposition using 50 keV Ar⁺ or focused Au⁺ irradiation in a trimethyl aluminum atmosphere. Films about 80 nm thick were deposited at a dose of 1 × 10¹⁶ cm⁻², with composition and depth profile measured by Auger electron spectroscopy, and maskless pattern deposition was performed using 50 keV focused ion beams. The deposited films contain oxygen, carbon, and aluminum with an atomic ratio of 0.8:1.1:1.4 at the surface and 0.8:3.3:1 at the interior, indicating depth‑dependent composition.
50 keV Ar + or focused Au + were irradiated in a trimethyl aluminum atmosphere to investigate characteristics of ion beam assisted deposition. About 80 nm thick films were deposited at a dose of 1×10 16 /cm 2 . The film composition and its depth dependence was measured by Auger electron spectroscopy. It was found that the film contains oxygen, carbon and aluminum, and the atomic ratio varies across the film depth. The atomic ratio was 0.8(O):1.1 (C):1.4(Al) at the surface and was 0.8(O):3.3(C):1(Al) inside. A direct maskless pattern deposition was also done using 50 keV focused ion beams.
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Ion-beam-induced conductivity in polymer films
T. Venkatesan, Stephen R. Forrest, M. L. Kaplan et al. · Journal of Applied Physics · 1983 · 123 citations
A novel anisotropic dry etching technique
M. W. Geis, G. A. Lincoln, N. N. Efremow et al. · Journal of Vacuum Science and Technology · 1981 · 118 citations