Applied Physics Letters · 2010 · 25 citations · 14 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsAb Initio MethodsElectronic Band StructureElectronic SpectroscopyElectronic StructureElectronic Structure Of SolidsSemiconductor PhysicsBand Structure CalculationBrillouin Zone AnalysisBrillouin ZonesDielectric FunctionElectronic Structure DeterminationEllipsometrySlater-type OrbitalsSpectroscopic Ellipsometry
We report dielectric function data from 0.74 to 6.54 eV for InAs at 22 K, obtained by spectroscopic ellipsometry. Critical-point (CP) structures are blueshifted and significantly sharpened relative to those seen at room-temperature (RT). The E0′, E2Δ, E2, E0′+Δ0′, and E2′ features in the E2 energy range of 4.0 to 5.6 eV cannot be resolved at RT but are clearly separated at 22 K. The energies of the CPs giving rise to these structures are determined by line shape fitting to numerically calculated second energy derivatives, and their Brillouin-zone locations identified by band structure calculations using the linear augmented Slater-type orbital method.
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