Applied Physics Letters · 2005 · 146 citations · 5 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsOptoelectronicsSemiconductor MaterialsElectro-optic EffectsOptical Properties Of SemiconductorsQuantum DotsQuantum OptoelectronicsSemiconductor Device MaterialsSemiconductor PhysicsAnisotropic ExchangeExcitonic EffectsExcitonic MaterialsExcitonsFine Structure ExcitationOptical PropertiesSelf-assembled Quantum DotsSemiconductor Quantum Dots
The influence of an in-plane electric field on the optical properties of single quantum dots is investigated. On a sample containing a plane of InAs∕GaAs dots, micrometer-size electro-optical structures were produced in order to apply an external electric field in the dot plane. A large decrease of the anisotropic exchange splitting, correlated with the in-plane Stark shift, is observed.
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Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots
P. W. Fry, I. E. Itskevich, D. J. Mowbray et al. · Physical Review Letters · 2000 · 523 citations · Full text
Voltage-Controlled Optics of a Quantum Dot
Alexander Högele, Stefan Seidl, Martin Kroner et al. · Physical Review Letters · 2004 · 256 citations · Full text