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Preparation of Carbon‐Free GaAs Surfaces: AES and RHEED Analysis
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1981
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SemiconductorsMaterials ScienceChemical EngineeringSurface TechnologySemiconductor SurfaceEngineeringSurface CharacterizationSurface AnalysisSurface ScienceApplied PhysicsSurface EngineeringCarbon‐free Gaas SurfacesCrystal OrientationCarbon AdsorptionSurface TreatmentThin FilmsSurface ProcessingCompound Semiconductor
Chemical polishing using an system and thermal treatments in vacuum to obtain clean surfaces have been systematically studied for {100} and {111} surfaces. The behavior of these surfaces as far as oxidation and carbon adsorption are concerned has been found to depend on both conductivity type and crystal orientation. The results presented for {100} n‐ and p‐type and semi‐insulating material show that it is possible to obtain carbon‐free surfaces, covered by a thin oxide layer which protects the semiconductor surface against contamination. A subsequent thermal treatment around 550°C under vacuum permits elimination of the oxide and achieves atomically clean, crystalline and ordered surfaces, which has been confirmed by AES and RHEED analysis.