A. Muñoz-Yagüe - Concepedia

Author

A. Muñoz-Yagüe

Laboratoire d'Analyse et d'Architecture des Systèmes

Also Known As

A Munoz-Yague, A Muñoz-Yague, A Muñoz-Yagüe, A. MUNOZ-YAGUE, A. MUNOZ‐YAGUE, A. Munoz-Yague, A. Munoz-yague, A. Munoz‐Yague, A. Muñoz-Yagüe, A. Muñoz-Yague

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Laboratoire d'Analyse et d'Architecture des Systèmes Centre National de la Recherche Scientifique Université Toulouse III - Paul Sabatier Universidad Autónoma de Madrid Institut National des Sciences Appliquées de Toulouse

About

A. Muñoz-Yagüe is an author at Laboratoire d'Analyse et d'Architecture des Systèmes specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	32	863
2	Applied Physics	16	32	865
3	Chemical Engineering	6	6	137
4	Natural Sciences	3	3	70
5	Health Sciences	1	1	10

A. Muñoz-Yagüe

Publications

889

Citations

H-Index

Page 1

	Year	Citations
Microtwinning and growth defects in GaAs MBE layers Marise Bafleur, A. Muñoz-Yagüe, A. Rocher Journal of Crystal Growth Epitaxial GrowthEngineeringApplied PhysicsGaas Mbe LayersMolecular Beam Epitaxy	1982	86
GaAs/(Ca,Sr)F2/(001) GaAs lattice-matched structures grown by molecular beam epitaxy S. Siskos, C. Fontaine, A. Muñoz-Yagüe Applied Physics Letters Materials ScienceElectrical EngineeringEngineeringPhysicsGaas Lattice-matched Structures	1984	72
Optical determination of strains in heterostructures: GaAs/Si as an example G. Landa, R. Carles, C. Fontaine, Journal of Applied Physics Materials SciencePhotonicsIi-vi SemiconductorOptical MaterialsEngineering	1989	69
Raman study of longitudinal optical phonon-plasmon coupling and disorder effects in heavily Be-doped GaAs Adnen Mlayah, R. Carles, G. Landa, Journal of Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesBe-doped GaasDisorder Effects	1991	68
Epitaxial growth of lattice-matched Ca<i>x</i>Sr1−<i>x</i>F2 on (100) and (110) GaAs substrates S. Siskos, C. Fontaine, A. Muñoz-Yagüe Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringEngineeringPhysics	1984	57
Preparation of Carbon‐Free GaAs Surfaces: AES and RHEED Analysis A. Muñoz-Yagüe, J. Piqueras, Nathalie Fabre Journal of The Electrochemical Society SemiconductorsMaterials ScienceChemical EngineeringSurface TechnologySemiconductor Surface	1981	55
Raman determination of the composition in semiconductor ternary solid solutions N. Saint-Cricq, G. Landa, J. B. Renucci, Journal of Applied Physics EngineeringSurface-enhanced Raman ScatteringSemiconductor Solid SolutionsSolid-state ChemistryChemistry	1987	34
Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca,Sr)F2 G. Landa, R. Carles, J. B. Renucci, Journal of Applied Physics Ii-vi SemiconductorElectrical EngineeringEngineeringPhysicsOptical Properties	1986	33
Er3+ doping of CaF2 layers grown by molecular beam epitaxy E. Daran, L. E. Bausá, A. Muñoz-Yagüe, Applied Physics Letters Materials EngineeringMaterials ScienceEpitaxial GrowthOptical MaterialsEngineering	1993	28
Nd3+ incorporation in CaF2 layers grown by molecular beam epitaxy L. E. Bausá, R. Legros, A. Muñoz-Yagüe Applied Physics Letters Materials ScienceChemical EngineeringOptical MaterialsEngineeringMaterial Analysis	1991	26

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