Epitaxial growth of lattice-matched Ca<i>x</i>Sr1−<i>x</i>F2 on (100) and (110) GaAs substrates

Abstract

Epitaxial growth of monocrystalline layers of mixed fluorides (CaxSr1−xF2) using molecular beams on GaAs substrates is reported for the first time. Good morphology and crystalline quality of the layers have been obtained. Some possible applications of these structures are considered, and preliminary results are reported concerning the electrical behavior of metal-insulator-semiconductor devices and the use of CaxSr1−xF2 as encapsulant or as masking material for GaAs.