Japanese Journal of Applied Physics · 1992 · 77 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor ReliabilitySemiconductor Thin FilmsThin-film TransistorsBand GapFilm StressOptical Band GapPlasma-assisted Chemical Vapor DepositionPlasma-enhanced Chemical Vapor DepositionPlasma-enhanced DepositionSiliconSilicon Nitride
The optimum condition of plasma-enhanced chemical vapor deposition to deposite silicon nitride (SiN x ) film and its application as a gate insulator of a-Si thin-film transistor (TFT) have been investigated. The internal stress of SiN x in the range of 4.3×10 9 dyn/cm 2 tensile to 8.0×10 9 dyn/cm 2 compressive is found to be controllable by changing the ratio of H 2 and N 2 in the source gases without affecting the optical band gap. Satisfactory TFT characteristics and high reliability are realized by using a gate insulator of SiN x having either stoichiometric or N-rich composition which shows the large optical band gap.
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W. A. P. Claassen, W. G. J. N. Valkenburg, M. F. C. Willemsen et al. · Journal of The Electrochemical Society · 1985 · 191 citations