RF performance of top-gated, zero-bandgap graphene field-effect transistors

Abstract

We present the first experimental high-frequency measurements of graphene field-effect transistors (GFETs), demonstrating an f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> of 14.7 GHz for a 500-nm-length device. We also present detailed measurement and analysis of velocity saturation in GFETs, demonstrating the potential for velocities approaching 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> cm/sec and the effect of an ambipolar channel on current-voltage characteristics.