Concepedia

Injection electroluminescence in phosphorous-ion-implanted ZnSe <i>p-n</i> junction diodes

Y. S. Park, B. K. Shin

Journal of Applied Physics · 1974 · 43 citations · 9 references

Abstract

Electroluminescence has been obtained from phosphorus-implanted ZnSe p-n junction diodes at room temperature. In forward bias, the diodes exhibit an electroluminescence spectrum similar to the red photoluminescence spectrum with a peak at 6300 Å giving an external quantum efficiency of 0.01%.

References

9

Phosphorus and Arsenic Impurity Centers in ZnSe. II. Optical and Electrical Properties

A. R. Reinberg, W. C. Holton, M. de Wit et al. · Physical review. B, Solid state · 1971 · 75 citations

Natural Sciences, Chemistry, Materials Science +17

Injection Electroluminescence in ZnS and ZnSe

M. Aven, D. A. Cusano · Journal of Applied Physics · 1964 · 54 citations

Engineering, Materials Engineering, Materials Science +17

TYPE CONVERSION AND <i>p-n</i> JUNCTION FORMATION IN LITHIUM-ION-IMPLANTED ZnSe

Y. S. Park, Chan‐Hwa Chung · Applied Physics Letters · 1971 · 45 citations

Engineering, Materials Engineering, Materials Science +14

EFFICIENT VISIBLE INJECTION ELECTROLUMINESCENCE FROM <i>p-n</i> JUNCTIONS IN ZnSe<i>x</i>Te1−<i>x</i>

M. Aven · Applied Physics Letters · 1965 · 39 citations

Engineering, Materials Engineering, Materials Science +10

Tunnel-Injection Electroluminescence

A. Fischer, H.I. Moss · Journal of Applied Physics · 1963 · 37 citations

Engineering, Electrical Engineering, Materials Science +5