Journal of Applied Physics · 1995 · 86 citations · 19 references
SemiconductorsDielectric FunctionRoom TemperatureOptical MaterialsEngineeringIi-vi SemiconductorPhysicsOptical PropertiesSpectroscopyOptoelectronic MaterialsApplied PhysicsNatural SciencesOptical SpectroscopyElectronic StructureOptoelectronicsSpectroscopic PropertyElectrical PropertyModel Dielectric Function
The real (ε1) and imaginary (ε2) parts of the dielectric function, ε(E)=ε1(E)+iε2(E), of PbSe have been measured by spectroscopic ellipsometry in the 1.15–5.4 eV photon-energy range at room temperature. The measured spectroscopic-ellipsometry data reveal distinct structures at three critical-point energies (E1, E2, and E3). These data are analyzed using the two theoretical models, namely, the model dielectric function and standard critical-point model. It is found that both the model dielectric function and standard critical-point model successfully explain the measured derivative spectra, d2ε/dE2. It is also found that the model dielectric function shows excellent agreement with the experimental ε(E) spectra, but the standard critical-point model does not. Dielectric-related optical constants, such as the complex refractive index, absorption coefficient, and normal-incidence reflectivity, of PbSe are also presented.
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F. Wooten, Sumner P. Davis · American Journal of Physics · 1973 · 4.5K citations
<i>Ellipsometry and Polarized Light</i>
R. M. A. Azzam, N. M. Bashara, Stanley S. Ballard · Physics Today · 1978 · 4.3K citations
Optical Properties of Semiconductors
H. R. Philipp, Hannelore Ehrenreich · Physical Review · 1963 · 2.1K citations
Semiconductors, Ii-vi Semiconductor, Electrical Engineering +13